DocumentCode
1817678
Title
A precise event-driven circuit simulator based on predicted fan-in voltages
Author
Fujisawa, Hisanori ; Kawafuji, Fumiyo ; Kitaura, Tomoyasu ; Kage, Tetsuro
Author_Institution
Fujitsu Labs. Ltd., Atsugi, Japan
fYear
1995
fDate
6-9 Mar 1995
Firstpage
595
Abstract
We propose a new event-driven circuit simulation method for MOS transistor circuits. This method is based on predicted and revised voltages of nodes, and is highly accurate. Furthermore this method can use an effective block selection function (EBSF) which allows faster simulation with the same accuracy. In industrial circuits, actually our method achieved accuracy equal to or higher than that of a SPICE-like simulator at 3 to 5 times the speed without EBSF, or 11 to 22 times the speed with EBSF
Keywords
MOS integrated circuits; MOSFET circuits; circuit analysis computing; MOS transistor circuits; effective block selection function; event-driven circuit simulator; predicted fan-in voltages; Circuit simulation; Delay effects; Discrete event simulation; Laboratories; MOSFETs; Predictive models; SPICE; Voltage; Workstations;
fLanguage
English
Publisher
ieee
Conference_Titel
European Design and Test Conference, 1995. ED&TC 1995, Proceedings.
Conference_Location
Paris
Print_ISBN
0-8186-7039-8
Type
conf
DOI
10.1109/EDTC.1995.470334
Filename
470334
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