Title :
A precise event-driven circuit simulator based on predicted fan-in voltages
Author :
Fujisawa, Hisanori ; Kawafuji, Fumiyo ; Kitaura, Tomoyasu ; Kage, Tetsuro
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
Abstract :
We propose a new event-driven circuit simulation method for MOS transistor circuits. This method is based on predicted and revised voltages of nodes, and is highly accurate. Furthermore this method can use an effective block selection function (EBSF) which allows faster simulation with the same accuracy. In industrial circuits, actually our method achieved accuracy equal to or higher than that of a SPICE-like simulator at 3 to 5 times the speed without EBSF, or 11 to 22 times the speed with EBSF
Keywords :
MOS integrated circuits; MOSFET circuits; circuit analysis computing; MOS transistor circuits; effective block selection function; event-driven circuit simulator; predicted fan-in voltages; Circuit simulation; Delay effects; Discrete event simulation; Laboratories; MOSFETs; Predictive models; SPICE; Voltage; Workstations;
Conference_Titel :
European Design and Test Conference, 1995. ED&TC 1995, Proceedings.
Conference_Location :
Paris
Print_ISBN :
0-8186-7039-8
DOI :
10.1109/EDTC.1995.470334
