DocumentCode :
1817797
Title :
Efficiency improvement techniques of high current low voltage rectifiers using MOSFETs
Author :
Shafik, ZiyadM ; Masoud, Mahmoud I. ; Fletcher, John E. ; Finney, Stephen J. ; Williams, Barry W.
Author_Institution :
Electr. & Electron. Eng. Dep., Univ. of Strathclyde, Glasgow, UK
fYear :
2009
fDate :
1-4 Sept. 2009
Firstpage :
1
Lastpage :
7
Abstract :
This paper presents techniques for loss minimization in ultra-high current low-voltage power supplies. The use of synchronous rectification using MOSFETs offers the advantage of reducing the conduction losses significantly compared to conventional rectification, with the possibility of achieving almost zero conduction losses through parallel connection. The design considerations for paralleling MOSFETs are briefly discussed, as paralleling is required for satisfying the high current requirements. Moreover, cryogenic operation of MOSFETs offers further reduction of the conduction losses. MOSFETs with various ratings are tested to evaluate the reduction in the on-resistance at liquid nitrogen temperature compared to the normal operating temperature. An estimate for the rectifier power losses including the cooling power is compared in order to show if it is advantageous for this specific application.
Keywords :
MOSFET; rectifiers; MOSFET; high current low voltage rectifiers; rectifier power losses; synchronous rectification; ultra-high current low-voltage power supplies; Cooling; Cryogenics; Current supplies; Low voltage; MOSFETs; Nitrogen; Power supplies; Rectifiers; Temperature; Testing; Cryogenic operation; Parallel Operation of MOSFETs; Synchronous rectifiers; low-voltage high-current rectifiers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Universities Power Engineering Conference (UPEC), 2009 Proceedings of the 44th International
Conference_Location :
Glasgow
Print_ISBN :
978-1-4244-6823-2
Type :
conf
Filename :
5429369
Link To Document :
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