Title :
An integrated GaAs receiver for optoelectronic signal processing and interconnection
Author :
Choi, Joongho ; Sheu, Bing J.
Author_Institution :
Dept. of Electr. Eng., Univ. of Southern California, Los Angeles, CA, USA
Abstract :
A GaAs optical receiver with Gbits/sec data rate was designed and fabricated in a 1.0-μm MESFET technology. The sensitivity is kept below -30 dBm and the transimpedance is tunable between 60 dBΩ and 80 dBΩ. An array of the receivers can be integrated in a single chip for optical interconnection and signal processing
Keywords :
integrated optoelectronics; 1 micron; III-V semiconductor; MESFET; array; integrated GaAs receiver; optical interconnection; optical receiver; optoelectronic signal processing; transimpedance amplifier; tunable transimpedance; CMOS technology; Gallium arsenide; Optical amplifiers; Optical design; Optical receivers; Optical sensors; Optical signal processing; Semiconductor optical amplifiers; Signal processing; Stimulated emission;
Conference_Titel :
Custom Integrated Circuits Conference, 1993., Proceedings of the IEEE 1993
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-0826-3
DOI :
10.1109/CICC.1993.590817
