DocumentCode
1817950
Title
An integrated GaAs receiver for optoelectronic signal processing and interconnection
Author
Choi, Joongho ; Sheu, Bing J.
Author_Institution
Dept. of Electr. Eng., Univ. of Southern California, Los Angeles, CA, USA
fYear
1993
fDate
9-12 May 1993
Abstract
A GaAs optical receiver with Gbits/sec data rate was designed and fabricated in a 1.0-μm MESFET technology. The sensitivity is kept below -30 dBm and the transimpedance is tunable between 60 dBΩ and 80 dBΩ. An array of the receivers can be integrated in a single chip for optical interconnection and signal processing
Keywords
integrated optoelectronics; 1 micron; III-V semiconductor; MESFET; array; integrated GaAs receiver; optical interconnection; optical receiver; optoelectronic signal processing; transimpedance amplifier; tunable transimpedance; CMOS technology; Gallium arsenide; Optical amplifiers; Optical design; Optical receivers; Optical sensors; Optical signal processing; Semiconductor optical amplifiers; Signal processing; Stimulated emission;
fLanguage
English
Publisher
ieee
Conference_Titel
Custom Integrated Circuits Conference, 1993., Proceedings of the IEEE 1993
Conference_Location
San Diego, CA
Print_ISBN
0-7803-0826-3
Type
conf
DOI
10.1109/CICC.1993.590817
Filename
590817
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