The optical polarization properties of lasing and photoluminescence in ridge quantum wire laser structures

Author

Watanabe, S. ; Yoshita, M. ; Baba, M. ; Akiyama, H. ; Koshiba, S. ; Sakaki, H.

Author_Institution

Inst. for Solid State Phys., Univ. of Tokyo, Chiba, Japan

fYear

2001

fDate

11-11 May 2001

Firstpage

85

Lastpage

86

Abstract

Summary form only given. The optical anisotropy in the semiconductor quantum wires (QWRs) largely depend on the shapes of quantum-confined structures that modify. the wave functions of the electronic states. We studied the polarization anisotropy of photoluminescence (PL) and lasing from the cleaved edges of the ridge GaAs/Al/sub 0.2/Ga/sub 0.8/As QWR laser structures, and considered the wave functions of the electronic states.

Keywords

III-V semiconductors; gallium arsenide; light polarisation; photoluminescence; quantum well lasers; ridge waveguides; semiconductor quantum wires; wave functions; waveguide lasers; GaAs-Al/sub 0.2/Ga/sub 0.8/As; GaAs/Al/sub 0.2/Ga/sub 0.8/As QWR laser; cleaved edges; electronic states; lasing; optical anisotropy; optical polarization properties; photoluminescence; polarization anisotropy; quantum-confined structures; ridge QWR laser structure; ridge quantum wire laser structures; semiconductor quantum wires; wave functions; Absorption; Gallium arsenide; Optical polarization; Photoluminescence; Quantum dot lasers; Quantum well lasers; Scanning electron microscopy; Transmission electron microscopy; Wave functions; Wire;

fLanguage

English

Publisher

ieee

Conference_Titel

Quantum Electronics and Laser Science Conference, 2001. QELS '01. Technical Digest. Summaries of Papers Presented at the

Conference_Location

Baltimore, MD, USA

Print_ISBN

1-55752-663-X

Type

conf

DOI

10.1109/QELS.2001.961889

Filename

961889