Title :
A 5.8-GHz quadrature cross-coupled oscillator
Author :
Fernandes, Jorge R. ; Kouwenhoven, Michiel H L ; Van den Bos, Chris ; Van Hartingsveldt, Koen ; Verhoeven, Chris
Author_Institution :
INESC-ID-Lisboa, Instituto Superior Tecnico, Lisbon, Portugal
Abstract :
This paper describes an implementation of a quadrature cross-coupled relaxation oscillator to be used in an OFDM RF frontend transceiver. A prototype of the oscillator was realized in a Si-Ge BiCMOS technology, and an oscillator frequency of 5.8 GHz was obtained, which is 1/6 of the maximum fT of the bipolar transistors. The circuit uses two first order relaxation oscillators to which a level control stage has been added to make the circuit parameters less interdependent and to allow a higher frequency, without the need to further reduce the passive components values. The circuit performance is evaluated by simulation and by experiment.
Keywords :
BiCMOS analogue integrated circuits; Ge-Si alloys; MMIC oscillators; OFDM modulation; integrated circuit design; integrated circuit measurement; integrated circuit modelling; relaxation oscillators; semiconductor materials; transceivers; 5.8 GHz; OFDM RF front end transceivers; SiGe; SiGe BiCMOS quadrature cross-coupled oscillator; bipolar transistor maximum frequency; circuit simulation; first order relaxation oscillators; microwave oscillators; oscillator frequency; oscillator level control stage; oscillator passive components; quadrature cross-coupled relaxation oscillators; BiCMOS integrated circuits; Bipolar transistors; Circuit optimization; Circuit simulation; Level control; OFDM; Oscillators; Prototypes; Radio frequency; Transceivers;
Conference_Titel :
Circuits and Systems, 2002. ISCAS 2002. IEEE International Symposium on
Conference_Location :
Phoenix-Scottsdale, AZ
Print_ISBN :
0-7803-7448-7
DOI :
10.1109/ISCAS.2002.1011010
