• DocumentCode
    1818645
  • Title

    Characteristics on energy-absorption and outer insulation of semiconductor silicon rubber

  • Author

    Jianguo, Wang ; Jianhui, Yu ; CiXuan, Chen

  • Author_Institution
    Sch. of Electr. Eng., Wuhan Univ., China
  • Volume
    1
  • fYear
    2003
  • fDate
    1-5 June 2003
  • Firstpage
    150
  • Abstract
    The effect of thermal treatment on the thermal stability and energy-absorption of semiconductor silicon rubber resistance was studied. The experiments on the changes of hot and cool resistance, DTA&TG curves of semiconductor silicon rubber resistance before and after thermal treatment have been conducted. The result shows that semiconductor silicon rubber resistance after thermal treatment can get stable hot and cool resistance, and the thermal stability of semiconductor silicon rubber resistance may also increase in large scale. Impulse current generator was selected to conduct electric-thermal capacity and outer insulation test. The results show the damage phenomenon will become serious with the increase of energy, and the electric-thermal capacity is close to its pure thermal capacity. The outer insulation flashover field strength of rubber with RTV is 5.32 kV/cm that is nearly two times than that of rubber without RTV and is also close to that of pure silicon rubber.
  • Keywords
    differential thermal analysis; elemental semiconductors; flashover; heat treatment; insulation testing; rubber; silicon; specific heat; thermal stability; vulcanisation; DTA; RTV; Si; TG; cool resistance; electric-thermal capacity; energy-absorption properties; flashover; hot resistance; insulation; insulation test; semiconductor silicon rubber; thermal stability; thermal treatment; Dielectrics and electrical insulation; Electric resistance; Impulse testing; Insulation testing; Large-scale systems; Rubber; Silicon; Thermal conductivity; Thermal resistance; Thermal stability;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Properties and Applications of Dielectric Materials, 2003. Proceedings of the 7th International Conference on
  • ISSN
    1081-7735
  • Print_ISBN
    0-7803-7725-7
  • Type

    conf

  • DOI
    10.1109/ICPADM.2003.1218375
  • Filename
    1218375