Title :
Radiation induced single-word multiple-bit upsets correction in SRAM
Author :
Gill, Balkaran ; Nicolaidis, Michael ; Papachristou, Chris
Author_Institution :
Dept. of EECS, Case Western Reserve Univ., Cleveland, OH, USA
Abstract :
In this paper, the authors introduced an approach for single-word multiple-bit upsets (SMU) correction in SRAM. This approach uses the combination of built in current sensor (BICS) and Hamming single error correction/double error detection (SEC/DED) codes. The BICS is used with memory columns for online detection of upsets. When the upset is detected by the BICS, an immediate error correction is performed by the ECC. If ECC gives flag for uncorrectable error i.e. double or more errors in single word, then information from BICS is used to invert the data read from columns flagged by the BICS.
Keywords :
Hamming codes; SRAM chips; built-in self test; error correction; error detection; Hamming codes; SRAM; built in current sensor; memory columns; online detection; radiation induced single word multiple bit upsets correction; single error correction/double error detection; Error correction; Error correction codes; Logic; Microprocessors; Random access memory; Single event transient; Single event upset; Space technology; System-on-a-chip; Very large scale integration;
Conference_Titel :
On-Line Testing Symposium, 2005. IOLTS 2005. 11th IEEE International
Print_ISBN :
0-7695-2406-0
DOI :
10.1109/IOLTS.2005.59