DocumentCode
1818867
Title
Optimization of high Q CMOS-compatible microwave inductors using silicon CMOS technology
Author
Min Park ; Seonghearn Lee ; Hyun Kyu Yu ; Kee Soo Nam
Author_Institution
Semicond. Technol. Div., Electron. & Telecommun. Res. Inst., Taejeon, South Korea
Volume
1
fYear
1997
fDate
8-13 June 1997
Firstpage
129
Abstract
We present the extensive experimental results showing the important dependences of layout parameters on RF performance of rectangular spiral inductors, in order to determine the optimized layout parameters for designing the high Q inductors used in RF ICs at 2 GHz. The detailed comparative analysis is also carried out to investigate substrate effects by varying the substrate resistivity.
Keywords
CMOS analogue integrated circuits; Q-factor; circuit optimisation; field effect MMIC; inductors; integrated circuit layout; silicon; 2 GHz; RF IC; Si; high Q CMOS-compatible microwave inductor; layout optimization; rectangular spiral inductor; silicon CMOS technology; substrate resistivity; CMOS technology; Conductivity; Consumer electronics; Fabrication; Inductors; Microwave technology; Radio frequency; Silicon; Spirals; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1997., IEEE MTT-S International
Conference_Location
Denver, CO, USA
ISSN
0149-645X
Print_ISBN
0-7803-3814-6
Type
conf
DOI
10.1109/MWSYM.1997.604539
Filename
604539
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