• DocumentCode
    1818941
  • Title

    Polysulfone- doped polyaniline composite membranes. synthesis and electrochemical characteristics

  • Author

    Voicu, S.I. ; Stanciu, N.D. ; Nechifor, A.C. ; Vaireanu, D.I. ; Nechifor, G.

  • Author_Institution
    Fac. of Appl. Chem. & Mater. Sci., Univ. Politeh. of Bucharest, Bucharest
  • Volume
    2
  • fYear
    2008
  • fDate
    13-15 Oct. 2008
  • Firstpage
    245
  • Lastpage
    248
  • Abstract
    In order to combine the advantages of polysulfone (PSf) as a membrane material to that of polyaniline as a conductive polymer, one has attempted to obtain novel polysulfone-polyaniline composite membranes by a newly improved technique comparing to the existing ones. The strong point of this technique consists in a phase inversion by immersion precipitation accompanying by chemical reaction followed by the activation of polyaniline with sulfonated beta-cyclodextrine. The above synthesized membranes were structurally characterized using Scanning Electron Microscopy, FT-IR spectroscopy, thermal analysis. The ionic conductivity and electrochemical characteristics were also determined by Electrochemical Impedance Spectroscopy.
  • Keywords
    Fourier transform spectra; conducting polymers; electrochemical impedance spectroscopy; filled polymers; infrared spectra; ionic conductivity; materials preparation; membranes; precipitation; scanning electron microscopy; thermal analysis; FTIR spectroscopy; beta-cyclodextrine; chemical reaction; conductive polymer; electrochemical characteristics; electrochemical impedance spectroscopy; immersion precipitation; ionic conductivity; phase inversion; polysulfone-doped polyaniline composite membranes; scanning electron microscopy; thermal analysis; Biomembranes; Chemicals; Chemistry; Coagulation; Conducting materials; Electric resistance; Glass; Polymers; Solvents; Thermal resistance; composite membranes; doped polyaniline; electrochemical characteristics; polysulfone;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 2008. CAS 2008. International
  • Conference_Location
    Sinaia
  • ISSN
    1545-827X
  • Print_ISBN
    978-1-4244-2004-9
  • Type

    conf

  • DOI
    10.1109/SMICND.2008.4703392
  • Filename
    4703392