Title :
Model for the low frequency electrical relaxation in Si porous
Author :
Dafinei, A.A. ; Ioanid, Ana ; Dafinei, A.S.
Author_Institution :
Fac. of Phys., Univ. of Bucharest, Bucharest
Abstract :
In an non-homogenous dielectric, in the low frequency range, the polarization properties due to the free charge kinetic modifies as function of the accumulation and redistribution of this space charge on inhomogeneities. The relaxation of these polarization leads to the dispersion of the permittivity and conductivity. We propose a model for the low frequencies conductivity relaxation phenomena in porous Si porous (PS).
Keywords :
dielectric relaxation; electrical conductivity; elemental semiconductors; permittivity; porous semiconductors; silicon; Si; electrical conductivity relaxation; nonhomogenous dielectric; permittivity; polarization properties; porous materials; space charge; Conducting materials; Conductivity; Dielectric materials; Dispersion; Electromagnetic wave polarization; Energy barrier; Frequency; Kinetic theory; Permittivity; Space charge; Effective Medium Approximation (EMA); dispersion; electrical relaxation; non-homogenous dielectric;
Conference_Titel :
Semiconductor Conference, 2008. CAS 2008. International
Conference_Location :
Sinaia
Print_ISBN :
978-1-4244-2004-9
DOI :
10.1109/SMICND.2008.4703395
