Title :
Design of AC-coupled circuit for high-speed interconnects
Author :
Chun-Wei Huang ; Kai-Jen Liu ; Yu-Jung Huang ; Ming-Kun Chen ; Yi-Lung Lin ; Ming-Dou Ker
Author_Institution :
Dept. of Electron. Eng., I-Shou Univ., Kaohsiung, Taiwan
Abstract :
The scaling of semiconductor technology together with 3D IC stacking integration make it possible for many portable electronics to process large amount of multimedia data. AC-coupling enables chip placed face-to-face for signal transmission using close-field capacitive coupling. A high performance system design using AC coupled interconnect (ACCI) technology not only achieves shorter and faster interconnection between dies but also increases packaging density. This paper describes a chip-to-chip circuit design suitable for high-speed 3DIC interconnected applications. The AC-Coupled face-to-face (F2F) chip was simulated using HSPICE with TSMC 0.18-μm 1P6M CMOS technology process file under a 1.8 V supply voltage. The simulation results indicated the proposed circuit with the self-test characteristics can achieve differential signal transmission up to 2.5 Gbps.
Keywords :
CMOS integrated circuits; automatic testing; coupled circuits; design for testability; integrated circuit design; integrated circuit interconnections; integrated circuit packaging; integrated circuit testing; three-dimensional integrated circuits; 3D IC stacking integration; AC coupled interconnection technology; AC-coupled face-to-face circuit design; ACCI; F2F; HSPICE simulation; TSMC 1P6M CMOS technology; chip-to-chip circuit design; close-field capacitive coupling; high-speed 3D IC interconnection application; high-speed interconnection; multimedia data; packaging density; portable electronics; self-test characteristics; semiconductor scaling technology; signal transmission; size 0.18 mum; voltage 1.8 V; AC-Coupled; differential signal transmission; high-speed interconnected; three-dimensional integrated circuit (3D IC);
Conference_Titel :
Global High Tech Congress on Electronics (GHTCE), 2012 IEEE
Conference_Location :
Shenzhen
Print_ISBN :
978-1-4673-5086-0
DOI :
10.1109/GHTCE.2012.6490130