The design and performance of the silicon detectors for CLEO III

Author

Ward, C.W. ; Hopman, P.I. ; Alexander, J.P. ; Foland, A.D. ; Kim, P.C.

Author_Institution

Cornell Univ., Ithaca, NY, USA

Volume

1

fYear

1996

fDate

2-9 Nov 1996

Firstpage

123

Abstract

The results of the research and development on the silicon detectors for the CLEO III vertex detector are reported. Since the CLEO III detector design requires up to five detectors to be daisy chained, a significant amount of effort was directed at reducing capacitance. We have succeeded in designing a 5 cm×2.5 cm double metal (z-side) detector with less than 10 pF strip capacitance. Capacitance is also near 10 pF for the r-φ side. In addition, we have developed a novel p-barrier design (to isolate strips on the ohmic side) which virtually eliminates the Johnson noise component which results from the ohmic character of this type of isolation. We also report noise and cosmic ray signal data from various length ladders

Keywords

position sensitive particle detectors; silicon radiation detectors; thermal noise; CLEO III; CLEO III vertex detector; Johnson noise component; Si; capacitance; p-barrier design; silicon detectors; Capacitance; Detectors; Electrons; Noise reduction; Research and development; Signal to noise ratio; Silicon; Solids; Storage rings; Strips;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium, 1996. Conference Record., 1996 IEEE

Conference_Location

Anaheim, CA

ISSN

1082-3654

Print_ISBN

0-7803-3534-1

Type

conf

DOI

10.1109/NSSMIC.1996.590919

Filename

590919