Title :
On the implementation of device processing tolerances in FET Large Signal Models
Author :
Angelov, I. ; Ferndahl, M. ; Gavell, M.
Author_Institution :
MEL, Chalmers Univ., Goteborg, Sweden
Abstract :
Device technology is becoming quite mature and repeatable, but nevertheless, for various reasons, there are statistical variations in device parameters. These process variations will influence the accuracy of the designs and yield in production. The implementation of these variations in Large Signal Models is discussed in the paper.
Keywords :
field effect transistors; signal processing equipment; statistical analysis; FET large signal models; device parameters; device processing tolerances; statistical variations; Gallium arsenide; Indexes; FET; Large Signal Models; Statistical Models;
Conference_Titel :
Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMIC), 2012 Workshop on
Conference_Location :
Dublin
Print_ISBN :
978-1-4673-2950-7
Electronic_ISBN :
978-1-4673-2948-4
DOI :
10.1109/INMMIC.2012.6331917
