• DocumentCode
    1819038
  • Title

    On the implementation of device processing tolerances in FET Large Signal Models

  • Author

    Angelov, I. ; Ferndahl, M. ; Gavell, M.

  • Author_Institution
    MEL, Chalmers Univ., Goteborg, Sweden
  • fYear
    2012
  • fDate
    3-4 Sept. 2012
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    Device technology is becoming quite mature and repeatable, but nevertheless, for various reasons, there are statistical variations in device parameters. These process variations will influence the accuracy of the designs and yield in production. The implementation of these variations in Large Signal Models is discussed in the paper.
  • Keywords
    field effect transistors; signal processing equipment; statistical analysis; FET large signal models; device parameters; device processing tolerances; statistical variations; Gallium arsenide; Indexes; FET; Large Signal Models; Statistical Models;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMIC), 2012 Workshop on
  • Conference_Location
    Dublin
  • Print_ISBN
    978-1-4673-2950-7
  • Electronic_ISBN
    978-1-4673-2948-4
  • Type

    conf

  • DOI
    10.1109/INMMIC.2012.6331917
  • Filename
    6331917
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1819038