ZnO thin films deposited by spray pyrolysis technique

Author

Perniu, D. ; Duta, M. ; Catrinoi, D. ; Toader, C. ; Gosman, M. ; Ienei, E. ; Duta, A.

Author_Institution

Centre: Product Design for Sustainable Dev., Transilvania Univ. of Brasov, Brasov

Volume

2

fYear

2008

fDate

13-15 Oct. 2008

Firstpage

279

Lastpage

282

Abstract

Thin films of undoped and Al- and Ag-doped ZnO thin films have been obtained by spray pyrolysis deposition. The optimised parameters of deposition for the thin films to be used in optoelectronic applications are presented in the paper. The addition of low amounts of Al and Ag ions influences the film crystallinity and morphology. Based on the experimental results it is concluded that aluminium and silver act as dopants and reduce the band gap value of the host oxide, ZnO.

Keywords

II-VI semiconductors; aluminium; energy gap; gold; pyrolysis; semiconductor doping; semiconductor thin films; spray coating techniques; wide band gap semiconductors; zinc compounds; ZnO:Ag; ZnO:Al; band gap; crystallinity; doping; optoelectronic applications; spray pyrolysis technique; thin film deposition; Atomic force microscopy; Crystallization; Grain size; Morphology; Optical films; Photonic band gap; Spraying; Sputtering; Substrates; Zinc oxide; ZnO; spray pyrolysis deposition; thin film;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 2008. CAS 2008. International

Conference_Location

Sinaia

ISSN

1545-827X

Print_ISBN

978-1-4244-2004-9

Type

conf

DOI

10.1109/SMICND.2008.4703402

Filename

4703402