Title :
Dielectric tunnel parameters of CoFe/Al-O/CoFe in MTJ for 1T1MTJ MRAM applications
Author :
Li, Simon C. ; Su, J.P. ; Wu, T.-H. ; Lee, J.M. ; Shu, M.F.
Author_Institution :
Taiwan SPIN Res. Center, National Yunlin Univ. of Sci. & Technol., Taiwan
Abstract :
Dielectric tunnel parameters of thin insulating layer in MTJ of MRAM cell are measured and analyzed. General mathematical derivations for dielectric tunnel parameters in bright and dark region of MTJ cell are derived. Dielectric tunnel offset voltage in bright region of MTJ may relate to the screening effect of uneven dipole charge layer by external ramping bias and the spin-accumulated magnetization dipole layer by nonlinear tunnel current. The symmetry variation of dielectric tunnel charge in dark region of MTJ demonstrates a good balanced charge-conserved ferromagnetic plate capacitor. Parameters extraction and equivalent circuit model of dielectric tunnel capacitance C and resistance R from current-voltage curve for data 0 and 1 during 1T1MTJ read mode are illustrated.
Keywords :
aluminium compounds; cobalt alloys; dielectric properties; equivalent circuits; iron alloys; magnetic tunnelling; random-access storage; 1T1MTJ MRAM applications; CoFe-AlO-CoFe; bright region; current-voltage curve; dark region; dielectric tunnel charge; dielectric tunnel parameters; equivalent circuit model; external ramping bias; ferromagnetic plate capacitor; magnetization dipole layer; nonlinear tunnel current; screening effect; symmetry variation; uneven dipole charge layer; Capacitance; Capacitors; Dielectric measurements; Dielectrics and electrical insulation; Equivalent circuits; Magnetic analysis; Magnetic tunneling; Magnetization; Parameter extraction; Voltage;
Conference_Titel :
Memory Technology, Design, and Testing, 2005. MTDT 2005. 2005 IEEE International Workshop on
Conference_Location :
Taipei
Print_ISBN :
0-7695-2313-7
DOI :
10.1109/MTDT.2005.20
