Title :
A UHF outphasing transmitter based on class E power amplifiers
Author :
Marante, Reinel ; Rui, M.A. ; García, José A.
Author_Institution :
Dept. of Commun. Eng., Univ. of Cantabria, Santander, Spain
Abstract :
In this paper, an outphasing transmitter operating at UHF band (770 MHz) is presented, based on highly efficient Class E RF power amplifiers (PAs). Implemented on GaN HEMT technology and following a load modulation path close to the optimum, a simple lumped-element Chireix combiner allows obtaining an efficiency value over 60% along a 7 dB output power range. Spectrally efficient digital modulation formats, with nulls in the envelope, may be handled by means of a hybrid technique, combining outphasing modulation with envelope variation of the RF excitations. Average drain efficiency and PAE values of 68.6% and 66.2%, respectively, have been measured, for a 14 W WCDMA signal with a 5.06 dB PAPR, while meeting ACPR specifications.
Keywords :
III-V semiconductors; UHF power amplifiers; UHF transistors; gallium compounds; high electron mobility transistors; power combiners; radio transmitters; wide band gap semiconductors; ACPR specifications; GaN; HEMT technology; PAPR; RF excitations; UHF band; UHF outphasing transmitter; WCDMA signal; class E power amplifiers; digital modulation formats; efficiency 66.2 percent; efficiency 69.6 percent; frequency 770 MHz; load modulation; lumped-element Chireix combiner; power 14 W; Length measurement; Phase modulation; Power measurement; Radio frequency; Switches; Transmission line measurements; Transmitters; Chireix; GaN HEMT; class E; efficiency; outphasing transmitter; power amplifier;
Conference_Titel :
Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMIC), 2012 Workshop on
Conference_Location :
Dublin
Print_ISBN :
978-1-4673-2950-7
Electronic_ISBN :
978-1-4673-2948-4
DOI :
10.1109/INMMIC.2012.6331924