DocumentCode
1819318
Title
Intrinsic Class-F RF GaN power amplifier with a commercial transistor based on a modified “hybrid” approach
Author
Liu, Song ; Schreurs, Dominique
Author_Institution
Div. ESAT-TELEMIC, Univ. of Leuven, Leuven, Belgium
fYear
2012
fDate
3-4 Sept. 2012
Firstpage
1
Lastpage
3
Abstract
This paper presents an intrinsic high efficiency Class-F power amplifier with a commercial packaged transistor (CGH55015F from Cree). A recently proposed “hybrid” approach for PA design is adopted with modification. The current generator characteristic is extracted from low frequency simulation. The designed power amplifier achieves 79.2% power added efficiency (PAE) at 1 GHz with 40.3 dBm output power.
Keywords
III-V semiconductors; UHF power amplifiers; UHF transistors; gallium compounds; wide band gap semiconductors; CGH55015F; GaN; PA design; commercial packaged transistor; efficiency 79.2 percent; frequency 1 GHz; generator characteristic; intrinsic class-F RF power amplifier; intrinsic high efficiency Class-F power amplifier; modified hybrid approach; power added efficiency; Cable TV; Current measurement; Gallium nitride; Microwave amplifiers;
fLanguage
English
Publisher
ieee
Conference_Titel
Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMIC), 2012 Workshop on
Conference_Location
Dublin
Print_ISBN
978-1-4673-2950-7
Electronic_ISBN
978-1-4673-2948-4
Type
conf
DOI
10.1109/INMMIC.2012.6331925
Filename
6331925
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