DocumentCode
1819519
Title
A novel fermi level controlled High Voltage Transistor preventing sub-threshold hump
Author
Park, Byoung-Chul ; Lee, Sung-Young ; Chang, Dong-Ryul ; Bang, Kee-In ; Kim, Sung-Jun ; Yi, Sang-Bae ; Jung, Eun-Seung
Author_Institution
Sch. of Semicond. Eng., Samsung Semicond. Inst. of Technol.
Volume
2
fYear
2008
fDate
13-15 Oct. 2008
Firstpage
313
Lastpage
316
Abstract
In high voltage transistor (HVT), device characteristics could be affected by little changes of doping concentration or parasitic charges due to low substrate doping concentrations. Humps caused by boron segregation in sub-threshold region of HVT make bad effects on device characteristics. In this paper, we have presented the novel Fermi leve controlled HVT (FCHVT) to simply eliminate hump effects.
Keywords
Fermi level; power transistors; semiconductor doping; Fermi level controlled high voltage transistor; boron segregation; doping concentration; parasitic charges; subthreshold hump; Boron; Control systems; Electric variables; Large scale integration; MOSFET circuits; Semiconductor device doping; Temperature; Thermal stresses; Transistors; Voltage control; Boron segregation; FCHVT; FETi; FETp; Fermi-level; HVT; High Voltage Transistor; Hump; STI; Work-function;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 2008. CAS 2008. International
Conference_Location
Sinaia
ISSN
1545-827X
Print_ISBN
978-1-4244-2004-9
Type
conf
DOI
10.1109/SMICND.2008.4703412
Filename
4703412
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