Title :
A novel fermi level controlled High Voltage Transistor preventing sub-threshold hump
Author :
Park, Byoung-Chul ; Lee, Sung-Young ; Chang, Dong-Ryul ; Bang, Kee-In ; Kim, Sung-Jun ; Yi, Sang-Bae ; Jung, Eun-Seung
Author_Institution :
Sch. of Semicond. Eng., Samsung Semicond. Inst. of Technol.
Abstract :
In high voltage transistor (HVT), device characteristics could be affected by little changes of doping concentration or parasitic charges due to low substrate doping concentrations. Humps caused by boron segregation in sub-threshold region of HVT make bad effects on device characteristics. In this paper, we have presented the novel Fermi leve controlled HVT (FCHVT) to simply eliminate hump effects.
Keywords :
Fermi level; power transistors; semiconductor doping; Fermi level controlled high voltage transistor; boron segregation; doping concentration; parasitic charges; subthreshold hump; Boron; Control systems; Electric variables; Large scale integration; MOSFET circuits; Semiconductor device doping; Temperature; Thermal stresses; Transistors; Voltage control; Boron segregation; FCHVT; FETi; FETp; Fermi-level; HVT; High Voltage Transistor; Hump; STI; Work-function;
Conference_Titel :
Semiconductor Conference, 2008. CAS 2008. International
Conference_Location :
Sinaia
Print_ISBN :
978-1-4244-2004-9
DOI :
10.1109/SMICND.2008.4703412
