GaN power amplifier design exploiting wideband large-signal matching

Author

Di Falco, Sergio ; Raffo, Antonio ; Resca, Davide ; Scappaviva, Francesco ; Vadala, Valeria ; Vannini, Giorgio

Author_Institution

MEC s.r.l., Bologna, Italy

fYear

2012

fDate

3-4 Sept. 2012

Firstpage

1

Lastpage

3

Abstract

The present manuscript details a wideband high power amplifier design, based on a 5-mm GaN power bar. In particular, a broadband input large-signal matching condition has been realized, that ensures optimal power transfer under actual device operation. The measured performance of the PA perfectly matches the expected predictions based on large-signal measurements carried out on a 1.25-mm GaN elementary cell.

Keywords

III-V semiconductors; gallium compounds; power amplifiers; wide band gap semiconductors; GaN; PA; actual device operation; elementary cell; large-signal measurements; optimal power transfer; size 1.25 mm; size 5 mm; wideband high power amplifier design; wideband large-signal matching; Gallium nitride; Impedance matching; Impedance measurement; Microwave amplifiers; Microwave measurements; Power amplifiers; Power measurement; Microwave amplifier; Wideband amplifiers; large-signal measurements; power amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMIC), 2012 Workshop on

Conference_Location

Dublin

Print_ISBN

978-1-4673-2950-7

Electronic_ISBN

978-1-4673-2948-4

Type

conf

DOI

10.1109/INMMIC.2012.6331934

Filename

6331934