Title :
PAE improvement using 2nd harmonic source injection at x-band
Author :
Haynes, Merv ; Cripps, Steve C. ; Benedikt, Johannes ; Tasker, Paul J.
Author_Institution :
Selex Galileo Ltd., Luton, UK
Abstract :
Theory and measurements are presented comparing Class B amplifier performance of a 0.5 W GaAs pHEMT driven with (a) a sinusoidal signal or (b) using 2nd harmonic input injection. Engineering the input waveform in this way leads to a class B operating mode requiring 3.4 dB less input drive at 9 GHz. This increases power gain and maintains the output power. The 2nd harmonic injection case then shows a 5.9% PAE improvement over the class B case.
Keywords :
gallium arsenide; high electron mobility transistors; microwave amplifiers; 2nd harmonic source injection; Class B amplifier performance; GaAs; PAE improvement; X-band; class B case; frequency 9 GHz; gain 3.4 dB; pHEMT; power 0.5 W; Gallium arsenide; Indexes; Logic gates; PHEMTs; RNA; Wireless communication; Efficiency; PHEMT; Power Amplifier;
Conference_Titel :
Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMIC), 2012 Workshop on
Conference_Location :
Dublin
Print_ISBN :
978-1-4673-2950-7
Electronic_ISBN :
978-1-4673-2948-4
DOI :
10.1109/INMMIC.2012.6331936
