PD characteristics of a void between semiconducting layer and insulating layer

Author

Kim, C.-S. ; Mizutani, T. ; Kobayashi, S. ; Morimoto, N. ; Tsuji, S. ; Saitou, H.

Author_Institution

Dept. of Electr. Eng., Nagoya Univ., Japan

Volume

1

fYear

2003

fDate

1-5 June 2003

Firstpage

315

Abstract

PD measurement is important in the after laying test for an ultra-high voltage power cable line because PD is sensitive to defects in a cable system. However, the PD characteristics for defects in the cable system strongly depend upon the type or the size of defects. PD characteristics of a void, for example, and their change with time are not well understood yet. In this paper, the PD characteristics of a void between semiconducting layer and insulating layer have been investigated. Especially, the changes in PD pattern with time and applied voltages were discussed. These results give us important information to improve the insulation diagnosis of cable line.

Keywords

insulation testing; partial discharge measurement; polyethylene insulation; power cable insulation; semiconductor materials; voids (solid); PD measurement; applied voltages; insulating layer; insulation diagnosis; semiconducting layer; ultra-high voltage power cable line; void; Cable insulation; Conducting materials; Electrodes; Impedance; Power cable insulation; Power cables; Power system reliability; Pulse measurements; Semiconductivity; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Properties and Applications of Dielectric Materials, 2003. Proceedings of the 7th International Conference on

ISSN

1081-7735

Print_ISBN

0-7803-7725-7

Type

conf

DOI

10.1109/ICPADM.2003.1218415

Filename

1218415