Transmit and receive amplifiers for e-band communications systems using GaAs pHEMT technology

Author

Powell, John ; Moore, M. ; Munday, P. ; Sloan, R. ; Duff, C.I. ; Rice, P.

Author_Institution

Skyarna Ltd., Birmingham, UK

fYear

2012

fDate

3-4 Sept. 2012

Firstpage

1

Lastpage

3

Abstract

Measured performance is given for a transmit and a receive amplifier MMIC fabricated using the WINsemi PP10 GaAs pHEMT process in the band 71 to 76 GHz. Small signal circuit measurements are compared with `first cut´ transistor and circuit models and demonstrate reasonable correlation. Model developments are currently underway to assess improvements to simulated data. Initial measured performance indicates that this process is suitable for applications to E band offering the potential for highly integrated affordable chipsets.

Keywords

III-V semiconductors; MMIC amplifiers; gallium arsenide; high electron mobility transistors; millimetre wave amplifiers; transistors; E-band communication system; GaAs; WINsemi PPI0 pHEMT process; frequency 71 GHz to 76 GHz; high integrated affordable chipset; receive amplifier; small signal circuit measurement; transmit amplifier; Abstracts; Educational institutions; Gain measurement; Indexes; MMICs; PHEMTs; Volume measurement; Amplifiers; Gallium arsenide; MIMICs; Millimeter wave circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMIC), 2012 Workshop on

Conference_Location

Dublin

Print_ISBN

978-1-4673-2950-7

Electronic_ISBN

978-1-4673-2948-4

Type

conf

DOI

10.1109/INMMIC.2012.6331937

Filename

6331937