A study on performance degradation of SiC MOSFET for burn-in test of body diode

Author

Funaki, Tsuyoshi

Author_Institution

Osaka Univ., Suita, Japan

fYear

2013

fDate

8-11 July 2013

Firstpage

1

Lastpage

5

Abstract

The defect expansion in pn junction of SiC device due to current conduction degrades device performance. The long duration dc current conduction and free-wheeling in switching operation of body diode may have an impact on the conduction and blocking capability of SiC MOSFET. This paper experimentally evaluates the deterioration of SiC MOSFETs for long term dc current conduction of body diode and free-wheeling current conduction of body diode in switching operation of MOSFET. The test result reveals that the multiplication of on resistance and the increment of leakage current in blocking condition are found stemming from body diode conduction for some SiC MOSFETs.

Keywords

MOSFET; leakage currents; p-n junctions; semiconductor device testing; semiconductor diodes; silicon compounds; wide band gap semiconductors; MOSFET; SiC; body diode; burn-in test; free-wheeling current conduction; leakage current; pn junction; Logic gates; MOSFET; Schottky diodes; Silicon carbide; Switches; Threshold voltage; SiC MOSFET; blocking voltage; body diode; conduction resistance; threshold gate voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics for Distributed Generation Systems (PEDG), 2013 4th IEEE International Symposium on

Conference_Location

Rogers, AR

Type

conf

DOI

10.1109/PEDG.2013.6785593

Filename

6785593