C-V parameter extraction technique for characterisation the diffused junctions of semiconductor devices

Considering the Gaussian model for the diffused junctions and beginning with the electric charge density equation applied for the semiconductor junctions, new relations for the depletion region width and barrier capacitance were obtained. Based on these relations, a new C-V method to extract the parameters of semiconductor devices, respectively of semiconductor junctions is presented. A very good agreement was obtained between the theoretical model and experimental data. This technique can be applied to many semiconductor devices with diffused junctions, like p-n diodes, bipolar transistors, thyristors, IGBTs.