DocumentCode
1819711
Title
Systematic investigations on MESFETs and passive components transplanted by epitaxial lift off onto host materials with various resistivities
Author
Morf, T. ; Biber, C. ; Bachtold, W.
Author_Institution
Electron. Lab., Swiss Federal Inst. of Technol., Zurich, Switzerland
Volume
1
fYear
1997
fDate
8-13 June 1997
Firstpage
145
Abstract
In this paper we present RF measurements on MESFETs and spiral inductors fabricated on GaAs and transplanted by epitaxial lift off (ELO). ELO is a technology by which epitaxially grown layers are lifted off from their growth substrate and are subsequently reattached to a new host substrate.
Keywords
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; inductors; semiconductor epitaxial layers; GaAs; MESFET; RF measurement; epitaxial lift off; passive component; spiral inductor; substrate resistivity; Conductivity; Etching; Gallium arsenide; Indium phosphide; Laboratories; MESFETs; Radio frequency; Scanning electron microscopy; Silicon; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1997., IEEE MTT-S International
Conference_Location
Denver, CO, USA
ISSN
0149-645X
Print_ISBN
0-7803-3814-6
Type
conf
DOI
10.1109/MWSYM.1997.604543
Filename
604543
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