Analysis of potential function in cylindrical nanowires

Author

Zangeneh, Mahmoud ; Aghababa, Hossein ; Forouzandeh, Bahjat

Author_Institution

Sch. of Electr. & Comput. Eng., Univ. of Tehran, Tehran

Volume

2

fYear

2008

fDate

13-15 Oct. 2008

Firstpage

355

Lastpage

358

Abstract

This paper presents extracted closed-form expressions for the potential function in cylindrical nanowires in presence of extrinsic charge distribution term, arising from doping. These expressions are derived from the solution to Poisson-Boltzmann ordinary differential equation. This ODE has been solved in terms of intrinsic carrier concentration, temperature and the distance from the central axis of the nanowire in each point inside the wire. Considering extrinsic charge distribution is an innovation in this paper as there assumed to be no external charge in the potential function analysis in previous works. Finally, some simulations have been used to verify the closed-form expressions. These simulations illustrate the potential function of the silicon-based cylindrical nanowire in terms of the distance from its axes and the environmental temperature.

Keywords

Fermi level; Schottky barriers; carrier density; charge exchange; differential equations; elemental semiconductors; functional analysis; nanocontacts; nanowires; permittivity; semiconductor doping; semiconductor quantum wires; semiconductor-metal boundaries; silicon; Fermi level; Poisson-Boltzmann ordinary differential equation; Si; charge transfer; doping; extrinsic charge distribution; insulator dielectric constant; intrinsic carrier concentration; metal contact geometry; metal-semiconductor Schottky barrier height; potential function; silicon-based cylindrical nanowire; Closed-form solution; Differential equations; Electrostatics; Fabrication; Nanoscale devices; Nanowires; Poisson equations; Silicon; Temperature; Wire;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 2008. CAS 2008. International

Conference_Location

Sinaia

ISSN

1545-827X

Print_ISBN

978-1-4244-2004-9

Type

conf

DOI

10.1109/SMICND.2008.4703424

Filename

4703424