Title :
Neutron induced damage in GaAs MESFETs
Author :
Meneghesso, G. ; Paccagnella, A. ; Gasparetto, G. ; Camin, D.V. ; Fedyakin, N. ; Pessina, G. ; Canali, C.
Author_Institution :
Dipt. di Elettronica e Inf., Padova Univ., Italy
Abstract :
Implanted channel GaAs MESFETs subjected to neutron irradiation show large modifications of the pinch-off voltage, open-channel saturation current, and transconductance in agreement with previous results. In this work we demonstrate how an experimental technique, based on the frequency dispersion of the transconductance, gm(f), and output conductance, gD(f), can identify the deep levels induced by neutron irradiation through measurements performed directly on packaged devices. After irradiation, a frequency dispersion of the transconductance has been observed, while it was flat in the unirradiated device. The gm(f) curve shape depends on the device bias conditions, and it has permitted for the first time to evaluate the activation energy of different deep levels induced by neutron irradiation in MESFETs
Keywords :
III-V semiconductors; Schottky gate field effect transistors; deep levels; gallium arsenide; neutron effects; GaAs; GaAs MESFET; activation energy; deep levels; frequency dispersion; neutron irradiation damage; open-channel saturation current; output conductance; pinch-off voltage; transconductance; Dispersion; Frequency measurement; Gallium arsenide; MESFETs; Neutrons; Packaging; Performance evaluation; Shape; Transconductance; Voltage;
Conference_Titel :
Nuclear Science Symposium, 1996. Conference Record., 1996 IEEE
Conference_Location :
Anaheim, CA
Print_ISBN :
0-7803-3534-1
DOI :
10.1109/NSSMIC.1996.590953
