Title :
SiGe V band wide tuning-range VCO and frequency divider for phase locked loop
Author :
Zhang, Jian ; Huang, Guochi ; Fusco, Vincent
Author_Institution :
Inst. of Electron., Commun. & Inf. Technol. (ECIT), Queen´´s Univ. of Belfast, Belfast, UK
Abstract :
A V-band wide tuning-range VCO and high frequency divide-by-8 frequency divider using Infineon 0.35 μm SiGe HBT process are presented in this paper. An LC impedance peaking technique is introduced in the Miller divider to increase the sensitivity and operation frequency range of the frequency divider. Two static frequency dividers implemented using current mode logic are used to realize dividing by 4 in the circuit. The wide tuning range VCO operates from 51.9 to 64.1 GHz i.e. 20.3% frequency tuning range. The measured phase noise at the frequency divider output stage is around -98.5 dBc at 1 MHz. The circuit consumes 200mW and operates from a 3.5Vdc supply, and occupies 0.6×0.8 mm2 die area.
Keywords :
Ge-Si alloys; frequency dividers; heterojunction bipolar transistors; millimetre wave bipolar transistors; millimetre wave oscillators; phase locked loops; voltage-controlled oscillators; Infineon HBT process; LC impedance peaking technique; Miller divider; SiGe; V band wide tuning-range voltage-controlled oscillators; current mode logic; frequency 51.9 GHz to 64.1 GHz; high frequency divide-by-8 frequency divider; phase locked loop; phase noise; power 200 mW; size 0.35 mum; static frequency dividers; voltage 3.5 V; CMOS integrated circuits; CMOS technology; MMICs; Frequency divider; MMIC; SiGe HBT; V-Band; VCO;
Conference_Titel :
Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMIC), 2012 Workshop on
Conference_Location :
Dublin
Print_ISBN :
978-1-4673-2950-7
Electronic_ISBN :
978-1-4673-2948-4
DOI :
10.1109/INMMIC.2012.6331944
