SiGe V band wide tuning-range VCO and frequency divider for phase locked loop

Author

Zhang, Jian ; Huang, Guochi ; Fusco, Vincent

Author_Institution

Inst. of Electron., Commun. & Inf. Technol. (ECIT), Queen´´s Univ. of Belfast, Belfast, UK

fYear

2012

fDate

3-4 Sept. 2012

Firstpage

1

Lastpage

3

Abstract

A V-band wide tuning-range VCO and high frequency divide-by-8 frequency divider using Infineon 0.35 μm SiGe HBT process are presented in this paper. An LC impedance peaking technique is introduced in the Miller divider to increase the sensitivity and operation frequency range of the frequency divider. Two static frequency dividers implemented using current mode logic are used to realize dividing by 4 in the circuit. The wide tuning range VCO operates from 51.9 to 64.1 GHz i.e. 20.3% frequency tuning range. The measured phase noise at the frequency divider output stage is around -98.5 dBc at 1 MHz. The circuit consumes 200mW and operates from a 3.5Vdc supply, and occupies 0.6×0.8 mm2 die area.

Keywords

Ge-Si alloys; frequency dividers; heterojunction bipolar transistors; millimetre wave bipolar transistors; millimetre wave oscillators; phase locked loops; voltage-controlled oscillators; Infineon HBT process; LC impedance peaking technique; Miller divider; SiGe; V band wide tuning-range voltage-controlled oscillators; current mode logic; frequency 51.9 GHz to 64.1 GHz; high frequency divide-by-8 frequency divider; phase locked loop; phase noise; power 200 mW; size 0.35 mum; static frequency dividers; voltage 3.5 V; CMOS integrated circuits; CMOS technology; MMICs; Frequency divider; MMIC; SiGe HBT; V-Band; VCO;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMIC), 2012 Workshop on

Conference_Location

Dublin

Print_ISBN

978-1-4673-2950-7

Electronic_ISBN

978-1-4673-2948-4

Type

conf

DOI

10.1109/INMMIC.2012.6331944

Filename

6331944