Title :
Distortion contribution analysis of an LDMOS Doherty power amplifier
Author_Institution :
Dept. of Electr. Eng., Univ. of Oulu, Oulu, Finland
Abstract :
This paper presents a distortion contribution analysis of a 100 watt LDMOS RF Doherty power amplifier. The analysis is performed using recently developed distortion contribution analysis technique called as Volterra-on-top-of-harmonic-balance that is able to show the originating cause of nonlinearity and mixing mechanisms between harmonic bands. The analysis shows that the nonlinear output capacitance of the carrier amplifier is the main cause of distortion at peak power levels.
Keywords :
MOS analogue integrated circuits; Volterra equations; distortion; power amplifiers; radiofrequency amplifiers; LDMOS Doherty power amplifier; Volterra-on-top-of-harmonic-balance; carrier amplifier; nonlinear output capacitance; power 100 W; recent developed distortion contribution analysis technique; Radio frequency; Distortion analysis; Doherty power amplifier; Volterra analysis; polynomial device model;
Conference_Titel :
Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMIC), 2012 Workshop on
Conference_Location :
Dublin
Print_ISBN :
978-1-4673-2950-7
Electronic_ISBN :
978-1-4673-2948-4
DOI :
10.1109/INMMIC.2012.6331947
