• DocumentCode
    1819961
  • Title

    A wideband digital pre-distortion platform with 100 MHz instantaneous bandwidth for LTE-advanced applications

  • Author

    Wu, Huang-Jie ; Jing Xia ; Zhai, Jian-Feng ; Tian, Ling ; Yang, Meng-Su ; Zhang, Lei ; Zhu, Xiao-Wei

  • Author_Institution
    State Key Lab. of Millimeter Waves, Southeast Univ., Nanjing, China
  • fYear
    2012
  • fDate
    3-4 Sept. 2012
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    In this paper, a digital pre-distortion platform is designed for linearization of wideband power amplifier with nonlinearity and memory effect. The proposed platform consists of digital signal processing (DSP), field-programmable gate array (FPGA), analog to digital converter (ADC) and digital to analog converter (DAC) which are all operating under a high speed of 400MHz. The platform covers a frequency band from 1.9 GHz to 3.5 GHz and supports a bandwidth up to 100 MHz PTE-Advanced application. Experimental validation is carried out on a 1.95 GHz Gallium-Nitride(GaN) Doherty power amplifier (DPA) driven by a LTE-Advanced signal with bandwidth of 100 MHz and peak-to-average power ratio(PARP) of 9.8 dB. The testing DPD results show that adjacent channel leakage ratio (ACLR) reaches -50 dBc with about 15 dB improvement.
  • Keywords
    III-V semiconductors; UHF power amplifiers; analogue-digital conversion; digital signal processing chips; digital-analogue conversion; field programmable gate arrays; gallium compounds; microwave power amplifiers; wide band gap semiconductors; wideband amplifiers; ADC; DAC; DPA; DSP; Doherty power amplifier; FPGA; GaN; LTE-advanced application; PARP; analog to digital converter; bandwidth 100 MHz; digital signal processing; digital to analog converter; field-programmable gate array; frequency 1.9 GHz to 3.5 GHz; frequency 400 MHz; instantaneous bandwidth; memory effect; noise figure 9.8 dB; nonlinearity effect; peak-to-average power ratio; wideband digital pre-distortion platform; wideband power amplifier; Bandwidth; Conferences; Microwave amplifiers; Radio frequency; Digital pre-distortion; Doherty; LTE-Advanced; Wideband;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMIC), 2012 Workshop on
  • Conference_Location
    Dublin
  • Print_ISBN
    978-1-4673-2950-7
  • Electronic_ISBN
    978-1-4673-2948-4
  • Type

    conf

  • DOI
    10.1109/INMMIC.2012.6331949
  • Filename
    6331949