A MMIC/hybrid high-efficiency X-band power amplifier

Author

Litchfield, Michael ; Roberg, Michael ; Popovic, Zoya

Author_Institution

Univ. of Colorado at Boulder, Boulder, CO, USA

fYear

2013

fDate

20-20 Jan. 2013

Firstpage

10

Lastpage

12

Abstract

This paper presents design and measurements of a X-band high-efficiency MMIC/hybrid PA implemented in the TriQuint 0.25-um GaN on SiC pHEMT process. In the absence of a nonlinear model valid for high-efficiency classes of operation, an output network with specific harmonic terminations is included in the MMIC, allowing for external fundamental load-pull only. The results show a power added efficiency (PAE) of 71% % with a saturated gain of 12 dB and output power of 3 W, or 4.5 W/mm, at 9.8 GHz in CW operation.

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; field effect MMIC; gallium compounds; harmonics suppression; silicon compounds; wide band gap semiconductors; GaN; MMIC power amplifiers; SiC; X-band; frequency 9.8 GHz; gain 12 dB; harmonic terminations; hybrid high-efficiency power amplifier; nonlinear model; pHEMT process; power 3 W; power added efficiency; size 0.25 mum; Gallium nitride; Harmonic analysis; Impedance; MMICs; Microwave circuits; Power generation; Tuners; Hybrid; Load-Pull; MMIC; Power Amplifier;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Amplifiers for Wireless and Radio Applications (PAWR), 2013 IEEE Topical Conference on

Conference_Location

Santa Clara, CA

Print_ISBN

978-1-4673-2915-6

Electronic_ISBN

978-1-4673-2931-6

Type

conf

DOI

10.1109/PAWR.2013.6490172

Filename

6490172