Title :
Characterization and modelling of microwave and millimeter-wave large-signal device-circuit interaction based on electro-thermal physical models
Author_Institution :
Dept. of Electron. & Electr. Eng., Leeds Univ., UK
Abstract :
This paper describes a comprehensive approach to modelling the large-signal behaviour of microwave and millimeter-wave transistor circuits based on electro-thermal physical device models with harmonic-balance or time-domain simulators. MESFET oscillator and pHEMT MMIC power amplifier designs have been used to validate the method, achieving excellent agreement between simulated and measured data.
Keywords :
HEMT integrated circuits; MESFET integrated circuits; MMIC power amplifiers; circuit analysis computing; digital simulation; field effect MIMIC; field effect MMIC; harmonic analysis; integrated circuit modelling; time-domain analysis; MESFET oscillator; electro-thermal physical models; harmonic-balance simulators; large-signal device-circuit interaction; microwave transistor circuits; millimeter-wave transistor circuits; pHEMT MMIC power amplifier; time-domain simulators; Circuit simulation; MESFETs; Microwave circuits; Microwave devices; Microwave oscillators; Millimeter wave circuits; Millimeter wave measurements; Millimeter wave technology; Millimeter wave transistors; Time domain analysis;
Conference_Titel :
Microwave Symposium Digest, 1997., IEEE MTT-S International
Conference_Location :
Denver, CO, USA
Print_ISBN :
0-7803-3814-6
DOI :
10.1109/MWSYM.1997.604545
