Characterization and modelling of microwave and millimeter-wave large-signal device-circuit interaction based on electro-thermal physical models

Author

Snowden, C.M.

Author_Institution

Dept. of Electron. & Electr. Eng., Leeds Univ., UK

Volume

1

fYear

1997

fDate

8-13 June 1997

Firstpage

155

Abstract

This paper describes a comprehensive approach to modelling the large-signal behaviour of microwave and millimeter-wave transistor circuits based on electro-thermal physical device models with harmonic-balance or time-domain simulators. MESFET oscillator and pHEMT MMIC power amplifier designs have been used to validate the method, achieving excellent agreement between simulated and measured data.

Keywords

HEMT integrated circuits; MESFET integrated circuits; MMIC power amplifiers; circuit analysis computing; digital simulation; field effect MIMIC; field effect MMIC; harmonic analysis; integrated circuit modelling; time-domain analysis; MESFET oscillator; electro-thermal physical models; harmonic-balance simulators; large-signal device-circuit interaction; microwave transistor circuits; millimeter-wave transistor circuits; pHEMT MMIC power amplifier; time-domain simulators; Circuit simulation; MESFETs; Microwave circuits; Microwave devices; Microwave oscillators; Millimeter wave circuits; Millimeter wave measurements; Millimeter wave technology; Millimeter wave transistors; Time domain analysis;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1997., IEEE MTT-S International

Conference_Location

Denver, CO, USA

ISSN

0149-645X

Print_ISBN

0-7803-3814-6

Type

conf

DOI

10.1109/MWSYM.1997.604545

Filename

604545