Title :
Full wave BIE analysis of travelling waves in unbiased/velocity saturated FET structures with linearly controlled current density
Author :
Schroeder, W. ; Prost, W. ; Wolff, I.
Author_Institution :
Dept. of Electromagn. Theory & Eng., Duisburg Univ., Germany
Abstract :
The Hybrid Wave Boundary Integral Equation method is applied to analyze wave propagation along the width of a linearized InGaAs/InAlAs HFET model with accurate description of all geometrical details. Special consideration is given to the influence of operating conditions on propagation characteristics by introducing separate linear models for unbiased operation, channel depletion and velocity saturated operation. Results are given for the gate and drain mode in the passive device and for the mixed mode in presence of a linearly controlled channel current density.
Keywords :
III-V semiconductors; aluminium compounds; boundary integral equations; gallium arsenide; indium compounds; junction gate field effect transistors; millimetre wave field effect transistors; semiconductor device models; FET; InGaAs-InAlAs; channel depletion; drain mode; full wave BIE analysis; gate mode; hybrid wave boundary integral equation; linear HFET model; linearly controlled current density; mixed mode; passive device; travelling wave propagation; unbiased operation; velocity saturation; Conductivity; Current density; Eigenvalues and eigenfunctions; Electrodes; FETs; HEMTs; Integrated circuit modeling; MODFETs; Microwave Theory and Techniques Society; Thickness control;
Conference_Titel :
Microwave Symposium Digest, 1997., IEEE MTT-S International
Conference_Location :
Denver, CO, USA
Print_ISBN :
0-7803-3814-6
DOI :
10.1109/MWSYM.1997.604546
