Title :
Characterization and modeling of metal-resistance-semiconductor photodetectors
Author :
Zappa, F. ; Lacaita, A. ; Samori, C.
Author_Institution :
Dipartimento di Elettronica, Politecnico di Milano, Italy
Abstract :
We report an extensive characterization of metal-resistance-semiconductor (MRS) photodetectors. Even if they look similar to avalanche photodiodes (APD), they have a peculiar resistive layer placed on top of the avalanching region, which makes the defector work as an ensemble of smaller devices, with separately stabilized operating bias. This feedback improves the uniformity of the multiplication gain, compared to conventional APDs. We describe the experimental procedure for the parameters extraction and derive a quantitative model of the detector´s operation
Keywords :
MIS devices; photodetectors; semiconductor device models; MRS photodetectors; avalanching region; feedback; metal-resistance-semiconductor photodetectors; modeling; multiplication gain uniformity; parameters extraction; resistive layer; Area measurement; Avalanche photodiodes; Detectors; Electronic ballasts; Feedback; Photodetectors; Resistors; Silicon; Substrates; Titanium;
Conference_Titel :
Nuclear Science Symposium, 1996. Conference Record., 1996 IEEE
Conference_Location :
Anaheim, CA
Print_ISBN :
0-7803-3534-1
DOI :
10.1109/NSSMIC.1996.591001
