DocumentCode
1820598
Title
Characterization and modeling of metal-resistance-semiconductor photodetectors
Author
Zappa, F. ; Lacaita, A. ; Samori, C.
Author_Institution
Dipartimento di Elettronica, Politecnico di Milano, Italy
Volume
1
fYear
1996
fDate
2-9 Nov 1996
Firstpage
385
Abstract
We report an extensive characterization of metal-resistance-semiconductor (MRS) photodetectors. Even if they look similar to avalanche photodiodes (APD), they have a peculiar resistive layer placed on top of the avalanching region, which makes the defector work as an ensemble of smaller devices, with separately stabilized operating bias. This feedback improves the uniformity of the multiplication gain, compared to conventional APDs. We describe the experimental procedure for the parameters extraction and derive a quantitative model of the detector´s operation
Keywords
MIS devices; photodetectors; semiconductor device models; MRS photodetectors; avalanching region; feedback; metal-resistance-semiconductor photodetectors; modeling; multiplication gain uniformity; parameters extraction; resistive layer; Area measurement; Avalanche photodiodes; Detectors; Electronic ballasts; Feedback; Photodetectors; Resistors; Silicon; Substrates; Titanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Nuclear Science Symposium, 1996. Conference Record., 1996 IEEE
Conference_Location
Anaheim, CA
ISSN
1082-3654
Print_ISBN
0-7803-3534-1
Type
conf
DOI
10.1109/NSSMIC.1996.591001
Filename
591001
Link To Document