Title :
Evaluation of effectiveness of median of absolute deviations outlier rejection-based IDDQ testing for burn-in reduction
Author :
Sabade, Sagar S. ; Walker, Duncan M.
Author_Institution :
Dept. of Comput. Sci., Texas A&M Univ., College Station, TX, USA
Abstract :
CMOS chips having high leakage are observed to have high burn-in fallout rate. IDDQ testing has been considered as an alternative to burn-in. However, increased subthreshold leakage current in deep submicron technologies limits the use of IDDQ testing in its present form. In this work, a statistical outlier rejection technique known as the median of absolute deviations (MAD) is evaluated as a means to screen early failures using IDDQ data. MAD is compared with delta IDDQ and current signature methods. The results of the analysis of the SEMATECH data are presented.
Keywords :
CMOS integrated circuits; VLSI; failure analysis; integrated circuit reliability; integrated circuit testing; leakage currents; production testing; statistical analysis; CMOS chips; IDDQ testing; SEMATECH data; burn-in fallout rate; burn-in reduction; deep submicron technologies; failure screening; median of absolute deviations; statistical outlier rejection technique; subthreshold leakage current; CMOS technology; Computer science; Costs; Leakage current; Manufacturing; Stress; Subthreshold current; System testing; Very large scale integration; Voltage;
Conference_Titel :
VLSI Test Symposium, 2002. (VTS 2002). Proceedings 20th IEEE
Print_ISBN :
0-7695-1570-3
DOI :
10.1109/VTS.2002.1011115
