Exhaustive analysis & behavior of nanometer MOSFET for threshold voltage variations

The threshold voltage value is one of the most important fundamental electrical parameter in modeling MOSFETs, which is taken from either capacitance characteristics or drain current, using one or more transistors. The MOSFET threshold voltage value will influence digital systems in static and dynamic work regime. If the threshold voltage is shriveled, it is possible to maintain good performance of a device. Numerous efforts have been made to balance the tradeoff between power, area and delay of a design. The aim of this paper is to research the consequence of physical parameters which individuate the MOSFET transistors structure on the threshold voltage values and its encroachment on critical voltage values on digital circuits that contain the MOSFET transistors. By changing the values of MOSFET physical parameters the accepted threshold voltage can be culminated. Since the threshold voltage will have impact on critical voltage values power, area and delay can be characterized.