Title :
Class-E power amplifier design at 2.5 GHz using a packaged transistor
Author :
Collins, Gayle Fran ; Wood, Jo
Author_Institution :
MaXentric Technol., La Jolla, CA, USA
Abstract :
A Class-E power amplifier has been designed to operate at 2.5 GHz using a commercial, packaged GaAs pHEMT. The design approach used a novel analysis of the package impedances. The objective was to present optimal harmonic loads to the transistor, using lumped-component matching on commercial PCB material. Using an MRFG35010 plastic packaged transistor, a drain efficiency of 72% with about 3 W output power was achieved at 2.55 GHz.
Keywords :
III-V semiconductors; UHF amplifiers; gallium arsenide; high electron mobility transistors; power amplifiers; GaAs; GaAs pHEMT; MRFG35010 plastic packaged transistor; PCB material; class-E power amplifier design; frequency 2.55 GHz; lumped-component matching; optimal harmonic load; package impedance analysis; Capacitance; Gallium arsenide; Harmonic analysis; Power amplifiers; Resonant frequency; Switches; Transistors; Class-E; Power amplifier; high efficiency; switching amplifier;
Conference_Titel :
Power Amplifiers for Wireless and Radio Applications (PAWR), 2013 IEEE Topical Conference on
Conference_Location :
Santa Clara, CA
Print_ISBN :
978-1-4673-2915-6
Electronic_ISBN :
978-1-4673-2931-6
DOI :
10.1109/PAWR.2013.6490198
