Title :
SOI active pixel detectors of ionizing radiation - technology & design development
Author :
Marczewski, J. ; Domanski, K. ; Grabiec, P. ; Grodner, M. ; Jaroszewicz, B. ; Kociubinski, A. ; Kucharski, K. ; Tomaszewski, D. ; Kucewicz, W. ; Kuta, S. ; Machowski, W. ; Niemiec, H. ; Sapor, M. ; Caccia, M.
Author_Institution :
Inst. of Electron Technol., Warsaw, Poland
Abstract :
This paper addresses the development of a novel monolithic active pixel image sensor based on SOI technology. The test active pixel matrices have been recently manufactured and are under extensive examination. The paper describes an idea of the device and shows the most recent test results.
Keywords :
CMOS image sensors; silicon radiation detectors; silicon-on-insulator; SOI active pixel detectors; Si-SiO2; image sensor; ionizing radiation; CMOS technology; Circuits; Conductivity; Ionizing radiation; Manufacturing; Radiation detectors; Semiconductor films; Silicon on insulator technology; Substrates; Testing;
Conference_Titel :
Nuclear Science Symposium Conference Record, 2003 IEEE
Print_ISBN :
0-7803-8257-9
DOI :
10.1109/NSSMIC.2003.1352064
