Title :
Throughput analysis of a LTE system for static environment
Author :
Das, R. Narasimha ; Bhuvaneswari, P.T.V. ; Ezhilarasi, S.
Author_Institution :
Dept. of Electron., Anna Univ., Chennai, India
Abstract :
Long Term Evolution (LTE) is a promising wireless network which assures a peak data rate of 100Mbps in the downlink and 50 Mbps in the uplink. In this paper, the physical layer characteristics of LTE as prescribed by 3GPP draft is analyzed in terms of Throughput and BER under various channel conditions, modulation schemes and channel band bandwidth. From the results obtained, it is observed that the throughput for a stationary user at the edge of a macro cell is reduced to half the ideal value. It is also observed that better performance is achieved when lower order modulation schemes are adapted for higher bandwidth and vice versa.
Keywords :
3G mobile communication; Long Term Evolution; OFDM modulation; 3GPP draft; LTE system; Long Term Evolution; channel band bandwidth; channel conditions; macro cell edge; modulation schemes; physical layer characteristics; static environment; stationary user; throughput analysis; Bandwidth; Bit error rate; Long Term Evolution; Modulation; OFDM; Signal to noise ratio; Throughput; BER; Bandwidth; Downlink; LTE; Physical Layer; SNR; Throughput;
Conference_Titel :
Signal Processing, Communication and Networking (ICSCN), 2015 3rd International Conference on
Conference_Location :
Chennai
Print_ISBN :
978-1-4673-6822-3
DOI :
10.1109/ICSCN.2015.7219854
