DocumentCode
1821051
Title
SVX4: a new deep submicron readout IC for the Tevatron Collider at Fermilab
Author
Krieger, B. ; Alfonsi, S. ; Bacchetta, N. ; Centro, S. ; Christofek, L. ; Garcia-Sciveres, M. ; Haber, C. ; Hanagaki, K. ; Hoff, J. ; Johnson, M. ; von der Lippe, H. ; Mandelli, E. ; Meng, G. ; Nomcrotski, A. ; Pellet, D. ; Rapidis, P. ; Utes, M. ; Walder
Author_Institution
Lawrence Berkeley Nat. Lab., CA, USA
Volume
1
fYear
2003
fDate
19-25 Oct. 2003
Firstpage
402
Abstract
SVX4 is the new silicon strip readout IC designed to meet the increased radiation tolerance requirements for Run IIb at the Tevatron collider. Devices have been fabricated, tested, and approved for production. The SVX4 design is a technology migration of the SVX3D design currently in use by CDF. Whereas SVX3D was fabricated in a 0.8 μm radiation-hard process, SVX4 was fabricated in a standard 0.25 μm mixed-signal CMOS technology using the "radiation tolerant by design" transistor topologies devised by the RD-49 collaboration. The specific cell layouts include digital cells developed by the ATLAS Pixel group, and full-custom analog blocks. Unlike its predecessors, the new design also includes the necessary features required for generic use by both the CDF and DO experiments at Fermilab. Performance of the IC includes >20 Mrad total dose tolerance, and ∼2000 e- rms equivalent input noise charge with 40 pF input capacitance, when sampled at 132 ns period with an 80 ns preamp risetime. At the nominal digitize/readout rate of 106/53 MHz, the 9 mm × 6.3 mm die dissipates ∼2 mW/channel average at 2.5 V. A review of typical operation, details of the design conversion process, and performance measurements are covered.
Keywords
CMOS integrated circuits; mixed analogue-digital integrated circuits; radiation hardening (electronics); silicon radiation detectors; Fermilab; SVX4; Tevatron Collider; deep submicron readout IC; mixed-signal CMOS technology; radiation tolerant by design; silicon strip readout IC; transistor topologies; CMOS process; CMOS technology; Capacitance; Collaboration; Integrated circuit noise; Production; Silicon; Strips; Testing; Topology;
fLanguage
English
Publisher
ieee
Conference_Titel
Nuclear Science Symposium Conference Record, 2003 IEEE
ISSN
1082-3654
Print_ISBN
0-7803-8257-9
Type
conf
DOI
10.1109/NSSMIC.2003.1352072
Filename
1352072
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