Title :
SVX4: a new deep submicron readout IC for the Tevatron Collider at Fermilab
Author :
Krieger, B. ; Alfonsi, S. ; Bacchetta, N. ; Centro, S. ; Christofek, L. ; Garcia-Sciveres, M. ; Haber, C. ; Hanagaki, K. ; Hoff, J. ; Johnson, M. ; von der Lippe, H. ; Mandelli, E. ; Meng, G. ; Nomcrotski, A. ; Pellet, D. ; Rapidis, P. ; Utes, M. ; Walder
Author_Institution :
Lawrence Berkeley Nat. Lab., CA, USA
Abstract :
SVX4 is the new silicon strip readout IC designed to meet the increased radiation tolerance requirements for Run IIb at the Tevatron collider. Devices have been fabricated, tested, and approved for production. The SVX4 design is a technology migration of the SVX3D design currently in use by CDF. Whereas SVX3D was fabricated in a 0.8 μm radiation-hard process, SVX4 was fabricated in a standard 0.25 μm mixed-signal CMOS technology using the "radiation tolerant by design" transistor topologies devised by the RD-49 collaboration. The specific cell layouts include digital cells developed by the ATLAS Pixel group, and full-custom analog blocks. Unlike its predecessors, the new design also includes the necessary features required for generic use by both the CDF and DO experiments at Fermilab. Performance of the IC includes >20 Mrad total dose tolerance, and ∼2000 e- rms equivalent input noise charge with 40 pF input capacitance, when sampled at 132 ns period with an 80 ns preamp risetime. At the nominal digitize/readout rate of 106/53 MHz, the 9 mm × 6.3 mm die dissipates ∼2 mW/channel average at 2.5 V. A review of typical operation, details of the design conversion process, and performance measurements are covered.
Keywords :
CMOS integrated circuits; mixed analogue-digital integrated circuits; radiation hardening (electronics); silicon radiation detectors; Fermilab; SVX4; Tevatron Collider; deep submicron readout IC; mixed-signal CMOS technology; radiation tolerant by design; silicon strip readout IC; transistor topologies; CMOS process; CMOS technology; Capacitance; Collaboration; Integrated circuit noise; Production; Silicon; Strips; Testing; Topology;
Conference_Titel :
Nuclear Science Symposium Conference Record, 2003 IEEE
Print_ISBN :
0-7803-8257-9
DOI :
10.1109/NSSMIC.2003.1352072