A new technique for the investigation of deep levels on irradiated silicon based on the Lazarus effect

Author

Mendes, Pedro Rato ; Abreu, Maria C. ; Eremin, Vladimir ; Li, Zheng ; Niinikoski, Tapio O. ; Rodrigues, Sónia ; Sousa, Patrick ; Verbitskaya, Elena

Author_Institution

LIP Lisbon, Portugal

Volume

1

fYear

2003

fDate

19-25 Oct. 2003

Firstpage

417

Abstract

A new technique for the investigation of deep levels on irradiated silicon by measuring the charge collection efficiency (CCE) of samples from 220 K down to 90 K is presented here. The temperature and time dependencies of the CCE have been measured with unprecedented precision and resolution for standard and oxygenated silicon diodes, and the data obtained have been analyzed in the framework of the Lazarus effect and polarization models, extracting information about the radiation-induced deep levels in the materials. Results are presented and discussed in terms of these models and what can be inferred from them when applied to experimental data.

Keywords

deep levels; elemental semiconductors; radiation hardening (electronics); silicon; 220 to 90 K; Lazarus effect; Si diodes; charge collection efficiency; deep levels; polarization models; temperature dependencies; time dependencies; Charge measurement; Current measurement; Data mining; Diodes; Information analysis; Measurement standards; Polarization; Silicon; Temperature dependence; Time measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium Conference Record, 2003 IEEE

ISSN

1082-3654

Print_ISBN

0-7803-8257-9

Type

conf

DOI

10.1109/NSSMIC.2003.1352075

Filename

1352075