3D Modeling of assembly influence on packaged transistors

Author

Moravek, Ondrej ; Hoffmann, Karel

Author_Institution

Fac. of Electr. Eng., Czech Tech. Univ. in Prague, Prague, Czech Republic

fYear

2011

fDate

1-2 Dec. 2011

Firstpage

1

Lastpage

6

Abstract

Detailed analysis of 70-mil package and wafer scale package (WSP) based on the 3D field simulations is presented. It is shown that an assembly plays significant role in the package behavior. Simulation results confirm that the parameters of the package are varying with the change of the assembly-substrate parameters. The approach potentially makes possible to transfer parameters of a transistor corresponding to certain assembly to another assembly without necessity of new measurements. It is very promising in the design of amplifiers namely power amplifiers (PA).

Keywords

integrated circuit packaging; power amplifiers; transistors; wafer-scale integration; 3D field simulations; WSP; assembly-substrate parameters; packaged transistors; power amplifiers; wafer scale package; Assembly; Equivalent circuits; Integrated circuit modeling; Solid modeling; Substrates; Three dimensional displays; Transistors; Electromagnetic modeling; integrated circuit modeling; microwave measurements; millimeter wave measurements; power amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Measurement Symposium (ARFTG), 2011 78th ARFTG

Conference_Location

Tempe, AZ

Print_ISBN

978-1-4673-0280-7

Type

conf

DOI

10.1109/ARFTG78.2011.6183866

Filename

6183866