DocumentCode :
1821285
Title :
3D Modeling of assembly influence on packaged transistors
Author :
Moravek, Ondrej ; Hoffmann, Karel
Author_Institution :
Fac. of Electr. Eng., Czech Tech. Univ. in Prague, Prague, Czech Republic
fYear :
2011
fDate :
1-2 Dec. 2011
Firstpage :
1
Lastpage :
6
Abstract :
Detailed analysis of 70-mil package and wafer scale package (WSP) based on the 3D field simulations is presented. It is shown that an assembly plays significant role in the package behavior. Simulation results confirm that the parameters of the package are varying with the change of the assembly-substrate parameters. The approach potentially makes possible to transfer parameters of a transistor corresponding to certain assembly to another assembly without necessity of new measurements. It is very promising in the design of amplifiers namely power amplifiers (PA).
Keywords :
integrated circuit packaging; power amplifiers; transistors; wafer-scale integration; 3D field simulations; WSP; assembly-substrate parameters; packaged transistors; power amplifiers; wafer scale package; Assembly; Equivalent circuits; Integrated circuit modeling; Solid modeling; Substrates; Three dimensional displays; Transistors; Electromagnetic modeling; integrated circuit modeling; microwave measurements; millimeter wave measurements; power amplifiers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Measurement Symposium (ARFTG), 2011 78th ARFTG
Conference_Location :
Tempe, AZ
Print_ISBN :
978-1-4673-0280-7
Type :
conf
DOI :
10.1109/ARFTG78.2011.6183866
Filename :
6183866
Link To Document :
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