DocumentCode
18213
Title
Size-dependent photoluminescence in silicon nanostructures: quantum confinement effect
Author
Kumar, Vipin ; Saxena, Kunal ; Shukla, A.K.
Author_Institution
Dept. of Phys., Indian Inst. of Technol. Delhi, New Delhi, India
Volume
8
Issue
6
fYear
2013
fDate
Jun-13
Firstpage
311
Lastpage
314
Abstract
Visible photoluminescence (PL) from laser-etched silicon nanostructures has been analysed. A systematic size dependence study of PL from silicon nanostructures has been performed. The PL from these structures is attributed to the quantum confinement effect. Different quantum confinement models have been used for PL and Raman lineshape fitting to calculate the mean size and size distribution of silicon nanostructures and the results are comparatively studied. Calculated values of oscillator strength and radiative lifetime show that PL is due to radiative recombination of confined excitons.
Keywords
Raman spectra; elemental semiconductors; excitons; laser beam etching; nanofabrication; nanostructured materials; oscillator strengths; photoluminescence; radiative lifetimes; silicon; Raman lineshape spectra; Si; confined excitons; laser etched silicon nanostructures; oscillator strength; quantum confinement effect; radiative lifetime; radiative recombination; size dependent visible photoluminescence; size distribution;
fLanguage
English
Journal_Title
Micro & Nano Letters, IET
Publisher
iet
ISSN
1750-0443
Type
jour
DOI
10.1049/mnl.2012.0910
Filename
6550647
Link To Document