• DocumentCode
    18213
  • Title

    Size-dependent photoluminescence in silicon nanostructures: quantum confinement effect

  • Author

    Kumar, Vipin ; Saxena, Kunal ; Shukla, A.K.

  • Author_Institution
    Dept. of Phys., Indian Inst. of Technol. Delhi, New Delhi, India
  • Volume
    8
  • Issue
    6
  • fYear
    2013
  • fDate
    Jun-13
  • Firstpage
    311
  • Lastpage
    314
  • Abstract
    Visible photoluminescence (PL) from laser-etched silicon nanostructures has been analysed. A systematic size dependence study of PL from silicon nanostructures has been performed. The PL from these structures is attributed to the quantum confinement effect. Different quantum confinement models have been used for PL and Raman lineshape fitting to calculate the mean size and size distribution of silicon nanostructures and the results are comparatively studied. Calculated values of oscillator strength and radiative lifetime show that PL is due to radiative recombination of confined excitons.
  • Keywords
    Raman spectra; elemental semiconductors; excitons; laser beam etching; nanofabrication; nanostructured materials; oscillator strengths; photoluminescence; radiative lifetimes; silicon; Raman lineshape spectra; Si; confined excitons; laser etched silicon nanostructures; oscillator strength; quantum confinement effect; radiative lifetime; radiative recombination; size dependent visible photoluminescence; size distribution;
  • fLanguage
    English
  • Journal_Title
    Micro & Nano Letters, IET
  • Publisher
    iet
  • ISSN
    1750-0443
  • Type

    jour

  • DOI
    10.1049/mnl.2012.0910
  • Filename
    6550647