DocumentCode :
1821648
Title :
Sensors based on silicon strain gauges
Author :
Craddock, Russell
Author_Institution :
Druck Ltd., Groby, UK
fYear :
1993
fDate :
34264
Firstpage :
42491
Lastpage :
42494
Abstract :
Modern piezoresistive sensors demand a high level of accuracy, and a more exact knowledge of the mechanisms of piezoresistance is required. Theoretical calculations coupled with accurate finite element models can be used to design linear sensors
Keywords :
electric sensing devices; elemental semiconductors; finite element analysis; piezoelectric transducers; piezoresistance; silicon; strain gauges; Si strain gauges; finite element models; linear sensor design; piezoresistance; piezoresistive sensors; semiconductor;
fLanguage :
English
Publisher :
iet
Conference_Titel :
Sensing Via Strain, IEE Colloquium on
Conference_Location :
London
Type :
conf
Filename :
287391
Link To Document :
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