Title :
Subthreshold MOS dynamic translinear neural and synaptic conductance
Author :
Yu, T. ; Joshi, S. ; Rangan, V. ; Cauwenberghs, G.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of California San Diego, La Jolla, CA, USA
fDate :
April 27 2011-May 1 2011
Abstract :
Recent advances in neuromorphic engineering for brain-like computing and neural prostheses are converging towards realization of electronic synaptic arrays approaching the integration density and energy efficiency of the human brain. A major impediment in this development is practical realization of complex conductance-based models of biophysical neural and synaptic dynamics in nanoscale electronics. Here we present such highly compact and low-power realizations, where each conductance is implemented using a single MOS transistor operating in subthreshold. Three alternative realizations are shown, implementing log-domain transformations of the conductance-based dynamics using translinear current scaling, capacitance scaling, and voltage scaling. Transistor level simulations validate the linearity of single transistor neural and synaptic conductance-capacitance dynamics in a 90nm CMOS process.
Keywords :
CMOS integrated circuits; MOSFET; bioelectric phenomena; neurophysiology; CMOS process; capacitance scaling; conductance-based dynamics; log-domain transformations; neural conductance-capacitance dynamics; single MOS transistor; subthreshold MOS dynamic translinear neural; synaptic conductance; synaptic conductance-capacitance dynamics; translinear current scaling; voltage scaling; Capacitance; Computers; Integrated circuit modeling; Neurons; Transistors; Very large scale integration;
Conference_Titel :
Neural Engineering (NER), 2011 5th International IEEE/EMBS Conference on
Conference_Location :
Cancun
Print_ISBN :
978-1-4244-4140-2
DOI :
10.1109/NER.2011.5910490