Title :
Radiation damage studies of DO silicon sensors for Run IIb
Author_Institution :
Fermilab, USA
Abstract :
The DO Silicon Microstrip Tracker has been operating for two years in the DO experiment at Fermilab. The existing silicon tracking system has limited lifetime to microdischarge effects at high bias voltage. Radiation studies of the current detector are described. We describe the design of the RunIIb replacement and discuss irradiations performed at Kansas State University. The hardness factor is found to be 40% lower than the value calculated from non ionizing energy loss scaling.
Keywords :
radiation hardening (electronics); silicon radiation detectors; DO Silicon Microstrip Tracker; Fermilab; Run IIb; Si; Si sensor; radiation damage; Annealing; Energy loss; Microstrip; Neutrons; Photodiodes; Radiation detectors; Silicon; System testing; Temperature dependence; Voltage;
Conference_Titel :
Nuclear Science Symposium Conference Record, 2003 IEEE
Print_ISBN :
0-7803-8257-9
DOI :
10.1109/NSSMIC.2003.1352120
