DocumentCode :
182216
Title :
Micro Barkhausen-Kurz oscillators for terahertz integrated systems
Author :
Dixit, Abhishek ; Snapp, Justin P. ; Lee, Tong H.
Author_Institution :
Stanford Microwave Integrated Circuits Lab., Stanford Univ., Stanford, CA, USA
fYear :
2014
fDate :
22-24 April 2014
Firstpage :
69
Lastpage :
70
Abstract :
We propose micro Barkhausen-Kurz oscillators suitable for operation at THz frequencies and can be fabricated along-side CMOS or III-V ICs. Electron dynamics will be described along with theoretical and particle-in-cell simulation results. Device performance and limitations will be discussed with emphasis on scaling of properties with frequency. Preliminary cathode and repeller structures made on silicon will be shown.
Keywords :
CMOS analogue integrated circuits; III-V semiconductors; elemental semiconductors; field effect MIMIC; millimetre wave oscillators; silicon; submillimetre wave integrated circuits; submillimetre wave oscillators; terahertz wave devices; CMOS; III-V ICs; Si; THz frequency; cathode; device performance; electron dynamics; microBarkhausen-Kurz oscillators; particle-in-cell simulation; repeller structures; terahertz integrated systems; Admittance; Anodes; Cathodes; Harmonic analysis; Oscillators; Radio frequency; Space charge; Barkhausen-Kurz; integrated systems; millimeter-wave; submillimeter-wave; terahertz;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Electronics Conference, IEEE International
Conference_Location :
Monterey, CA
Type :
conf
DOI :
10.1109/IVEC.2014.6857494
Filename :
6857494
Link To Document :
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