DocumentCode :
1822171
Title :
Electroluminescence properties of organic light-emitting diodes using ITO with different surface treatments
Author :
Iwama, Y. ; Cho, D.C. ; Mori, T. ; Mizutani, T.
Author_Institution :
Dept. of Electr. Eng., Nagoya Univ., Japan
Volume :
2
fYear :
2003
fDate :
1-5 June 2003
Firstpage :
718
Abstract :
In order to investigate the effects of the surface condition of indium-tin-oxide (ITO) substrate on electroluminescence (EL) properties of organic light-emitting diode (OLED), ITO substrates were cleaned by different cleaning methods. Two kinds of cleaning methods were introduced in this work; UV ozone- and O2 plasma-treatments. They lead to a smaller contact angle than organic washing, suggesting an importance of the cleaning of ITO surface. UV ozone-and O2 plasma-treatments reduced a threshold voltage of OLED. However, these treatments could not improve the EL efficiency per current density, because they affect the hole injection from ITO into organic layer, but not the recombination process. O2 plasma-treatment was pointed out to be more effective and convenient for cleaning ITO surface.
Keywords :
brightness; current density; electroluminescence; organic light emitting diodes; plasma materials processing; surface cleaning; ultraviolet radiation effects; EL efficiency; ITO; InSnO; O2 plasma-treatment; OLED; UV ozone treatment; cleaning; contact angle; current density; electroluminescence properties; hole injection; indium-tin-oxide substrate; organic light-emitting diodes; surface treatments; threshold voltage; Atmospheric measurements; Cleaning; Electroluminescence; Indium tin oxide; Liquid crystal displays; Organic light emitting diodes; Plasma applications; Plasma density; Plasma displays; Surface treatment;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Properties and Applications of Dielectric Materials, 2003. Proceedings of the 7th International Conference on
ISSN :
1081-7735
Print_ISBN :
0-7803-7725-7
Type :
conf
DOI :
10.1109/ICPADM.2003.1218518
Filename :
1218518
Link To Document :
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