Title :
Coherent bulk and folded acoustic phonon oscillations in InGaN light-emitting diodes structure
Author :
Yahng, J.S. ; Jho, Y.D. ; Yee, K.J. ; Oh, E.S. ; Kim, D.S.
Author_Institution :
Dept. of Phys., Seoul Nat. Univ., South Korea
Abstract :
Summary form only given. Recently, there has been much interest in InGaN/GaN multiple-quantum-well (MQW) structures due to their applicability as optoelectronic devices such as light-emitting diodes. (LEDs) and laser diodes. Their ultrafast and physical properties are also of significant interest. Anomalously large acoustic phonon oscillations have been observed using ultrafast lasers in InGaN MQWs (Chi-Kuang Sun et al, 2000). In this study, we have performed femtosecond pump-probe experiments in the reflection geometry on a 5 period InGaN/GaN MQW LED structure with well width of 20 /spl Aring/ and barrier width of 100 /spl Aring/.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; oscillations; phonons; photoacoustic effect; quantum well devices; wide band gap semiconductors; 100 angstrom; 20 angstrom; InGaN MQWs; InGaN light-emitting diode structures; InGaN-GaN; InGaN/GaN MQW LED structure; InGaN/GaN MQW structures; InGaN/GaN multiple-quantum-well structures; LEDs; acoustic phonon oscillations; barrier width; coherent bulk acoustic phonon oscillations; coherent folded acoustic phonon oscillations; femtosecond pump-probe experiments; laser diodes; light-emitting diodes; optoelectronic devices; physical properties; reflection geometry; ultrafast lasers; ultrafast properties; well width; Acoustic devices; Diode lasers; Gallium nitride; Laser theory; Light emitting diodes; Optoelectronic devices; Phonons; Pump lasers; Quantum well devices; Sun;
Conference_Titel :
Quantum Electronics and Laser Science Conference, 2001. QELS '01. Technical Digest. Summaries of Papers Presented at the
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-663-X
DOI :
10.1109/QELS.2001.962069
