DocumentCode :
1822224
Title :
Direct observation of the excitonic ac Stark splitting in a semiconductor quantum well
Author :
Saba, Mehreen ; Quochi, F. ; Ciuti, Cristiano ; Martin, Daniel ; Staehli ; Deveaud, B. ; Mura, A. ; Bongiovanni, Giancarlo
Author_Institution :
Phys. Dept, Fed. Inst. of Technol., Lausanne, Switzerland
fYear :
2001
fDate :
11-11 May 2001
Firstpage :
204
Lastpage :
205
Abstract :
Summary form only given. In the excitonic ac Stark shift in quantum wells the excitonic absorption line is blueshifted by shining on the sample an intense laser pulse, whose frequency is lower than the exciton transition frequency. The effect is bigger when the laser spectrum approaches the resonance with the excitonic absorption. But if the laser and excitonic absorption spectra sensibly overlap, a great amount of electronic population is excited and consequently the Coulomb nonlinearities due to the interaction between excited carries or excitons dramatically increase. One prominent effect under these conditions is the excitation- induced dephasing which can destroy the coherence of the electronic system and therefore the coupling between excitons and light, which is inherently coherent. Some evidence for the resonant Stark effect was already reported, but the direct observation of the spectral splitting was still missing. This observation demonstrates that the coherent exciton light coupling in semiconductors can be strong enough to survive the fast dephasing, and that therefore an efficient ultrafast manipulation of the exciton absorption in the coherent transient is possible. In order to magnify the ac Stark effect and its visibility a special sample was designed: a single In/sub 0.04/Ga/sub 0.96/As quantum well is grown on the top of an AlAs/AlGaAs distributed Bragg reflector; two /spl lambda//2 spacers separate the quantum well from the mirror and from the air. In this configuration the light field incident on the sample and the one reflected by the mirror constructively interfere at the quantum well position, giving a high effective absorption.
Keywords :
III-V semiconductors; excitons; gallium arsenide; indium compounds; quantum confined Stark effect; semiconductor quantum wells; time resolved spectra; Coulomb nonlinearities; In/sub 0.04/Ga/sub 0.96/As; Rabi oscillations; blue shift; coherent exciton light coupling; distributed Bragg reflector; electronic population; excitation-induced dephasing; excitonic AC Stark splitting; excitonic absorption line; pump-probe delay; reflection pump-probe; semiconductor quantum well; Absorption; Excitons; Frequency; Laser excitation; Laser transitions; Optical coupling; Quantum well lasers; Resonance; Semiconductor lasers; Stark effect;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Quantum Electronics and Laser Science Conference, 2001. QELS '01. Technical Digest. Summaries of Papers Presented at the
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-663-X
Type :
conf
DOI :
10.1109/QELS.2001.962070
Filename :
962070
Link To Document :
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